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1

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Effect of the ion mass and energy on the response of 70-nm SOI transistors to the ion deposited charge by direct ionization

Raine, Melanie, Gaillardin, Marc, Sauvestre, Jean-Etienne, Flament, Olivier, Bournel, Arnaud, Aubry-Fortuna, Valerie

Year:

2009

File:

PDF, 1.73 MB

2009

2

Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications

Shi, Ming, Saint-Martin, Jérôme, Bournel, Arnaud, Querlioz, Damien, Wichmann, Nicolas, Bollaert, Sylvain, Danneville, François, Dollfus, Philippe

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 767 KB

english, 2013

3

Proposal for a graphene-based all-spin logic gate

Su, Li, Zhao, Weisheng, Zhang, Yue, Querlioz, Damien, Zhang, Youguang, Klein, Jacques-Olivier, Dollfus, Philippe, Bournel, Arnaud

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.05 MB

english, 2015

4

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Educational project on the design of interface circuit for a Pirani pressure sensor

Zhang, Ming, Bournel, Arnaud, Llaser, Nicolas

Year:

2018

Language:

english

File:

PDF, 471 KB

english, 2018

5

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

Yang, Wei, CAO, Yuan, Han, Jiangchao, Lin, Xiaoyang, Wang, Xinhe, Wei, Guodong, Lv, Chen, Bournel, Arnaud, Zhao, Weisheng

Journal:

Year:

2020

File:

PDF, 1.90 MB

2020

6

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Hugues Cazin d'Honincthun, Sylvie Galdin-Retailleau, Arnaud Bournel, Philippe Dollfus, Jean-Philippe Bourgoin

Journal:

Comptes Rendus Physique

Year:

2008

Language:

english

File:

PDF, 1.28 MB

english, 2008

7

Numerical simulation of III–V FET architectures for high frequency and low consumption applications

Ming Shi, Jérôme Saint-Martin, Arnaud Bournel, Philippe Dollfus

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

8

An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs

Damien Querlioz, Philippe Dollfus, Van-Nam Do, Arnaud Bournel, Van Lien Nguyen

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 343 KB

english, 2006

9

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Damien Querlioz, Huu-Nha Nguyen, Jérôme Saint-Martin, Arnaud Bournel, Sylvie Galdin-Retailleau, Philippe Dollfus

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 1.60 MB

english, 2009

10

Spin-dependent collection in ferromagnet/semiconductor contacts

Arnaud Bournel, Philippe Dollfus, Patrice Hesto

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

11

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Alarcon, Alfonso, Nguyen, Viet-Hung, Berrada, Salim, Querlioz, Damien, Saint-Martin, Jérôme, Bournel, Arnaud, Dollfus, Philippe

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 758 KB

english, 2013

12

Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different Approaches

Raine, Mélanie, Hubert, Guillaume, Paillet, Philippe, Gaillardin, Marc, Bournel, Arnaud

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 870 KB

english, 2012

13

Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

Raine, Mélanie, Hubert, Guillaume, Gaillardin, Marc, Artola, Laurent, Paillet, Philippe, Girard, Sylvain, Sauvestre, Jean-Etienne, Bournel, Arnaud

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 805 KB

english, 2011

14

Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile

Raine, Mélanie, Hubert, Guillaume, Gaillardin, Marc, Paillet, Philippe, Bournel, Arnaud

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 1.05 MB

english, 2011

15

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1−xGex/Ge/Si1−xGextype-I quantum wells

Yahyaoui, Naima, Sfina, Noureddine, Lazzari, Jean-Louis, Bournel, Arnaud, Said, Moncef

Journal:

The European Physical Journal B / Condensed Matter and Complex Systems

Year:

2013

Language:

english

File:

PDF, 690 KB

english, 2013

16

Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance

Hung Nguyen, Viet, Saint-Martin, JÃ©rÃ´me, Querlioz, Damien, Mazzamuto, Fulvio, Bournel, Arnaud, Niquet, Yann-Michel, Dollfus, Philippe

Journal:

Journal of Computational Electronics

Year:

2013

Language:

english

File:

PDF, 804 KB

english, 2013

17

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Optimization of III-V FET architectures for high frequency and low consumption applications

Shi, Ming, Saint-Martin, Jerome, Bournel, Arnaud, Dollfus, Philippe

Year:

2010

Language:

english

File:

PDF, 906 KB

english, 2010

18

Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Berrada, Salim, Hung Nguyen, Viet, Querlioz, Damien, Saint-Martin, Jéro^me, Alarcón, Alfonso, Chassat, Christophe, Bournel, Arnaud, Dollfus, Philippe

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

19

On the non-linear effects in graphene devices

Nguyen, Viet Hung, Alarcón, Alfonso, Berrada, Salim, Nam Do, Van, Saint-Martin, Jérôme, Querlioz, Damien, Bournel, Arnaud, Dollfus, Philippe

Journal:

Journal of Physics D Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.43 MB

english, 2014

20

Multiscale simulation of carbon nanotube transistors

Maneux, Cristell, Fregonese, Sebastien, Zimmer, Thomas, Retailleau, Sylvie, Nguyen, Huu Nha, Querlioz, Damien, Bournel, Arnaud, Dollfus, Philippe, Triozon, François, Niquet, Yann Michel, Roche, Stepha

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 5.84 MB

english, 2013

21

First-order intervalley scattering in low-dimensional systems

Monsef, Florian, Dollfus, Philippe, Galdin, Sylvie, Bournel, Arnaud

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 70 KB

english, 2002

22

Erratum: First-order intervalley scattering in low-dimensional systems [Phys. Rev. B 65 , 212304 (2002)]

Monsef, Florian, Dollfus, Philippe, Galdin, Sylvie, Bournel, Arnaud

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 41 KB

english, 2003

23

[IEEE 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Sevilla, Spain (2011.09.19-2011.09.23)] 2011 12th European Conference on Radiation and Its Effects on Components and Systems - Implementing realistic heavy ion tracks in a SEE prediction tool: Comparison between different approaches

Raine, Melanie, Hubert, Guillaume, Paillet, Philippe, Gaillardin, Marc, Bournel, Arnaud

Year:

2011

Language:

english

File:

PDF, 503 KB

english, 2011

24

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport

Nguyen, Huu-Nha, Querlioz, Damien, Galdin-Retailleau, Sylvie, Bournel, Arnaud, Dollfus, Philippe

Year:

2009

Language:

english

File:

PDF, 360 KB

english, 2009

25

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Schrödinger-Poisson and Monte Carlo analysis of III–V MOSFETs for high frequency and low consumption applications

Shi, Ming, Saint-Martin, Jerome, Bournel, Arnaud, Dollfus, Philippe

Year:

2010

Language:

english

File:

PDF, 194 KB

english, 2010

26

[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Saint-Martin, Jerome, Querlioz, Damien, Bournel, Arnaud, Dollfus, Philippe

Year:

2006

Language:

english

File:

PDF, 4.14 MB

english, 2006

27

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors

Nguyen, Huu Nha, Retailleau, Sylvie, Querlioz, Damien, Bournel, Arnaud, Dollfus, Philippe

Year:

2009

Language:

english

File:

PDF, 224 KB

english, 2009

28

Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

Raine, Mélanie, Gaillardin, Marc, Sauvestre, Jean-Etienne, Flament, Olivier, Bournel, Arnaud, Aubry-Fortuna, Valérie

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 684 KB

english, 2010

29

Experimental Evidence of Large Dispersion of Deposited Energy in Thin Active Layer Devices

Raine, Mélanie, Gaillardin, Marc, Paillet, Philippe, Duhamel, Olivier, Girard, Sylvain, Bournel, Arnaud

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 1.17 MB

english, 2011

30

Angular Dependence of SOI Transistor Response to Heavy Ion Irradiation

Raine, Mélanie, Gaillardin, Marc, Paillet, Philippe, Sauvestre, Jean-Etienne, Duhamel, Olivier, Bournel, Arnaud

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 918 KB

english, 2010

31

[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - Assessment of III–V MOSFET architectures for low power applications using static and dynamic numerical simulation

Shi, Ming, Saint-Martin, Jerome, Bournel, Arnaud, Querlioz, Damien, Dollfus, Philippe, Mo, Jiongjong, Wichmann, Nicolas, Desplanque, Ludovic, Wallart, Xavier, Danneville, Francois, Bollaert, Sylvain

Year:

2011

Language:

english

File:

PDF, 718 KB

english, 2011

32

Wigner Monte Carlo simulation of phonon-induced electron decoherence in semiconductor nanodevices

Querlioz, Damien, Saint-Martin, Jérôme, Bournel, Arnaud, Dollfus, Philippe

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 530 KB

english, 2008

33

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

Huet, Karim, Querlioz, Damien, Chaisantikulwat, Wipa, Saint-Martin, Jéro^me, Bournel, Arnaud, Mouis, Mireille, Dollfus, Philippe

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 807 KB

english, 2008

34

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Quantum transport of Dirac fermions in graphene nanostructures

Dollfus, Philippe, Nguyen, Viet Hung, Do, Van Nam, Bournel, Arnaud

Year:

2010

Language:

english

File:

PDF, 2.64 MB

english, 2010

35

[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Monte Carlo study of effective mobility in short channel FDSOI MOSFETs

Guarnay, Sebastien, Triozon, Francois, Martinie, Sebastien, Niquet, Yann-Michel, Bournel, Arnaud

Year:

2014

Language:

english

File:

PDF, 391 KB

english, 2014

36

Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

Aubry-Fortuna, Valérie, Bournel, Arnaud, Dollfus, Philippe, Galdin-Retailleau, Sylvie

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

37

Influence of discrete impurity position in the channel of an ultra-small MOSFET

Dollfus, Philippe, Galdin-Retailleau, Sylvie, Bournel, Arnaud, Monsef, Florian, Barraud, Sylvain, Hesto, Patrice

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 97 KB

english, 2004

38

Monte Carlo Simulation of III–V Material-Based MOSFET for High Frequency and Ultra-Low Consumption Applications

Shi, Ming, Saint-Martin, Jérôme, Bournel, Arnaud, Maher, Hassan, Renvoise, Michel, Dollfus, Philippe

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2010

Language:

english

File:

PDF, 476 KB

english, 2010

39

Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor

Shi, Ming, Saint-Martin, Jérôme, Bournel, Arnaud, Querlioz, Damien, Dollfus, Philippe, Mo, Jiongjong, Wichmann, Nicolas, Desplanque, Ludovic, Wallart, Xavier, Danneville, Francois, Bollaert, Sylvain

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2013

Language:

english

File:

PDF, 356 KB

english, 2013

40

Current-limiting challenges for all-spin logic devices

Su, Li, Zhang, Youguang, Klein, Jacques-Olivier, Zhang, Yue, Bournel, Arnaud, Fert, Albert, Zhao, Weisheng

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 3.09 MB

english, 2015

41

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

Zhou, Jiaqi, Zhao, Weisheng, Wang, Yin, Peng, Shouzhong, Qiao, Junfeng, Su, Li, Zeng, Lang, Lei, Na, Liu, Lei, Zhang, Youguang, Bournel, Arnaud

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 802 KB

english, 2016

42

[IEEE 2016 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS) - Bremen, Germany (2016.9.21-2016.9.23)] 2016 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS) - Thermoelectric effects in graphene and graphene-based nanostructures using atomistic simulation

Dollfus, Philippe, Nguyen, V. Hung, Tran, V. Truong, Nguyen, M. Chung, Bournel, Arnaud, Saint-Martin, Jerome

Year:

2016

Language:

english

File:

PDF, 1.05 MB

english, 2016

43

High tunnel magnetoresistance in Mo/CoFe/MgO magnetic tunnel junction: A first-principles study

Zhou, Jiaqi, Zhao, Weisheng, Peng, Shouzhong, Qiao, Junfeng, Klein, Jacques Olivier, Lin, Xiaoyang, ZHANG, Youguang, Bournel, Arnaud

Journal:

IEEE Transactions on Magnetics

Year:

2017

Language:

english

File:

PDF, 637 KB

english, 2017

44

Gate-Driven Pure Spin Current in Graphene

Lin, Xiaoyang, Su, Li, Si, Zhizhong, Zhang, Youguang, Bournel, Arnaud, Zhang, Yue, Klein, Jacques-Olivier, Fert, Albert, Zhao, Weisheng

Journal:

Physical Review Applied

Year:

2017

Language:

english

File:

PDF, 3.15 MB

english, 2017

45

Silicene spintronics: Fe(111)/silicene system for efficient spin injection

Zhou, Jiaqi, Bournel, Arnaud, Wang, Yin, Lin, Xiaoyang, Zhang, Yue, Zhao, Weisheng

Journal:

Applied Physics Letters

Year:

2017

Language:

english

File:

PDF, 1.53 MB

english, 2017